CUHS20S40 Datasheet - Toshiba

CUHS20S40 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CUHS20S40 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS20S40 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 2 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150 .

CUHS20S40-Toshiba.pdf