• Part: HN1C01F
  • Description: Silicon NPN Epitaxial Type Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 471.40 KB
Download HN1C01F Datasheet PDF
Toshiba
HN1C01F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications - Small package (dual type) - High voltage and high current : VCEO = 50 V, IC = 150 m A (max) - High h FE : h FE = 120 to 400 - Excellent h FE linearity : h FE (IC = 0.1 m A) / h FE (IC = 2 m A) = 0.95 (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO 150 m A 30 m A PC- 300 m W Tj (Note 1) °C Tj (Note 2) Tstg (Note 1) - 55 to 150 °C Tstg (Note 2) - 55 to 125 JEDEC JEITA...