HN1C01F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Frequency General Purpose Amplifier Applications
- Small package (dual type)
- High voltage and high current
: VCEO = 50 V, IC = 150 m A (max)
- High h FE : h FE = 120 to 400
- Excellent h FE linearity
: h FE (IC = 0.1 m A) / h FE (IC = 2 m A) = 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
150 m A
30 m A
PC-
300 m W
Tj (Note 1)
°C
Tj (Note 2)
Tstg (Note 1)
- 55 to 150
°C
Tstg (Note 2)
- 55 to 125
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