HN1C01F Datasheet (Toshiba) - Silicon NPN Epitaxial Type Transistor

HN1C01F, Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) HN1C01F HN1C01F Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltag