HN1C03FU Datasheet (Toshiba) - Silicon NPN Epitaxial Type Transistor

HN1C03FU, Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU For Muting and Switching Applications HN1C03FU Unit: mm z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE = 2V, IC = 4mA) z Low on resistance: RON = 1Ω (typ.)(IB = 5mA) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V