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K1061 - 2SK1061

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Part number K1061
Manufacturer Toshiba
File Size 529.84 KB
Description 2SK1061
Datasheet download datasheet K1061 Datasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK1061 Unit: mm • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 0.6 Ω (typ.) • Enhancement-mode • Complementary to 2SJ167 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range ID IDP PD Tch Tstg 200 800 300 150 −55~150 mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1E Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.
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