Datasheet Details
Part number:
MG25J1BS11
Manufacturer:
File Size:
364.92 KB
Description:
Silicon N - Channel IGBT
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter
MG25J1BS11_ToshibaSemiconductor.pdf
MG25J1BS11, Silicon N - Channel IGBT
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj T
MG25J1BS11 Distributor
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