Datasheet Specifications
- Part number
- MG25J1BS11
- Manufacturer
- Toshiba ↗
- File Size
- 364.92 KB
- Datasheet
- MG25J1BS11_ToshibaSemiconductor.pdf
- Description
- Silicon N - Channel IGBT
Description
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement.
Applications
* Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature StoMG25J1BS11 Distributors
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