TBC550, TBC549 Silicon NPN Transistor

Toshiba

Description

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS..

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TBC550 Datasheet Preview — This datasheet PDF includes multiple part numbers: TBC550, TBC549. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBC550, TBC549
Manufacturer: Toshiba ↗
File Size: 52.35 KB
Datasheet: TBC549-Toshiba.pdf
Description: Silicon NPN Transistor
Note: This datasheet PDF includes multiple part numbers: TBC550, TBC549.
Please refer to the document for exact specifications by model.

Features

* . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakdown Voltage T

TBC550 Distributors

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TBC549 Silicon NPN Transistor Toshiba

Toshiba TBC550-like datasheet