Datasheet Specifications
- Part number
- TBC556
- Manufacturer
- Toshiba ↗
- File Size
- 50.94 KB
- Datasheet
- TBC556-Toshiba.pdf
- Description
- Silicon PNP Transistor
Description
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.Unit in mm .
Features
* . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (BTBC556 Distributors
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