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TBC556

Silicon PNP Transistor

TBC556 Features

* . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (B

TBC556 Datasheet (50.94 KB)

Preview of TBC556 PDF

Datasheet Details

Part number:

TBC556

Manufacturer:

Toshiba ↗

File Size:

50.94 KB

Description:

Silicon pnp transistor.

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TBC556 Silicon PNP Transistor Toshiba

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