TBC556 Datasheet, Transistor, Toshiba

TBC556 Features

• Transistor . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TB

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Part number:

TBC556

Manufacturer:

Toshiba ↗

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50.94kb

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📄 Datasheet

Description:

Silicon pnp transistor.

TAGS

TBC556

Toshiba

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