TBC557
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Silicon pnp transistor.
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TBC550 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
FEATURES . Low Noise : 4dB Max. (TBC549)
3dB .
TBC556 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . H.
TBC558 - Silicon PNP Transistor
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . H.
TBC559 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC559 TBC560
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
THE TBC559 AND TBC560 IS LOW .
TBC50C04 - Hall Current Sensor
(Token Electronics)
KEN R
TBC25C04/TBC50C04
TBC25C04/TBC50C04 、，、.
（）
-40℃～+85℃
50(60)HZ,1min
di/dt
(-3dB)
@70℃
TBC25C04 25
0～±55 .
TBC50DS - Hall Current Sensor
(Token Electronics)
KEN R
TBC-DS
TBC-DS
.
di/dt
TBC06DS 6
19.2 960 1% 100 0.5% 0.625 0.5%
(-1db) 50HZ,1min
TBC15DS 15 48
1200 1% 100 0.5% 0.625 0.5%
TBC25DS
TBC50.
TBC546 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
.
TBC547 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
.
TBC548 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
.
TBC549 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
FEATURES . Low Noise : 4dB Max. (TBC549)
3dB .
