TBC557, TBC556 Silicon PNP Transistor

Toshiba

Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.Unit in mm .

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TBC557 Datasheet Preview — This datasheet PDF includes multiple part numbers: TBC557, TBC556. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBC557, TBC556
Manufacturer: Toshiba ↗
File Size: 50.94 KB
Datasheet: TBC556-Toshiba.pdf
Description: Silicon PNP Transistor
Note: This datasheet PDF includes multiple part numbers: TBC557, TBC556.
Please refer to the document for exact specifications by model.

Features

* . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (B

TBC557 Distributors

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TBC556 Silicon PNP Transistor Toshiba

Toshiba TBC557-like datasheet