Datasheet Specifications
- Part number
- TBC559
- Manufacturer
- Toshiba ↗
- File Size
- 53.07 KB
- Datasheet
- TBC559-Toshiba.pdf
- Description
- Silicon PNP Transistor
Description
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.THE TBC559 AND TBC560 IS LOW .
Features
* . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O. E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBOTBC559 Distributors
📁 Related Datasheet
📌 All Tags