TBC559 Datasheet, Transistor, Toshiba

TBC559 Features

• Transistor . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.2

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Part number:

TBC559

Manufacturer:

Toshiba ↗

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53.07kb

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📄 Datasheet

Description:

Silicon pnp transistor.

TAGS

TBC559

Toshiba

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