* . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O.E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBO
TBC559
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Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC559 TBC560
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
THE TBC559 AND TBC560 IS LOW .
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