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TC511002P-85

DRAM

TC511002P-85 Features

* include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. "Test Mode" function is implemented from Revision C. FEATURES

* 1,048,576 words by 1 bit organization

* Fast access time and

TC511002P-85 General Description

The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1 bit. The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inp.

TC511002P-85 Datasheet (627.03 KB)

Preview of TC511002P-85 PDF

Datasheet Details

Part number:

TC511002P-85

Manufacturer:

Toshiba ↗

File Size:

627.03 KB

Description:

Dram.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION Th.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION Th.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION Th.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION Th.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION Th.

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TC511002P-85 DRAM Toshiba

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