TC518129AFWI-10 Datasheet (Toshiba) - SILICON GATE CMOS PSEUDO STATIC RAM

TC518129AFWI-10, SILICON GATE CMOS PSEUDO STATIC RAM

The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

The TC518129AFWI operates from a single 5V po

TC518129AFWI-10 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129AFWI, with the CE2 pin in the TC518128A family changed to a CS pi