TC518129BFL-10V Datasheet, Ram, Toshiba

✔ TC518129BFL-10V Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor inter

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TC518129BFL-10V

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Toshiba ↗

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📄 Datasheet

Description:

Silicon gate cmos pseudo static ram. The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one tr

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TC518129BFL-10V SILICON GATE CMOS PSEUDO STATIC RAM Toshiba