TC518129BFL-70V - SILICON GATE CMOS PSEUDO STATIC RAM
The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.
The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC518129B-V operates from a single power su
TC518129BFL-70V Features
* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to
