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TC518129BFWL-10V, TC518129BPL-70V Datasheet - Toshiba

TC518129BFWL-10V SILICON GATE CMOS PSEUDO STATIC RAM

The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power su.

TC518129BFWL-10V Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to

TC518129BPL-70V-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TC518129BFWL-10V, TC518129BPL-70V. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC518129BFWL-10V, TC518129BPL-70V

Manufacturer:

Toshiba ↗

File Size:

473.01 KB

Description:

Silicon gate cmos pseudo static ram.

Note:

This datasheet PDF includes multiple part numbers: TC518129BFWL-10V, TC518129BPL-70V.
Please refer to the document for exact specifications by model.

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TAGS

TC518129BFWL-10V TC518129BPL-70V SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

TC518129BFWL-10V Distributor