TC518129BFWL-70V

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC518129BFWL-70V Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to

TC518129BFWL-70V General Description

The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power su.

TC518129BFWL-70V Datasheet (473.01 KB)