TC518512TRL-10

SILICON GATE CMOS PSEUDO STATIC RAM

Toshiba

TC518512TRL-10 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin smal

TC518512TRL-10 General Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The TC518512PL operates from a single 5V power.

TC518512TRL-10 Datasheet (285.64 KB)