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TC518512TRL-10LT, TC518512PL Datasheet - Toshiba

TC518512TRL-10LT SILICON GATE CMOS PSEUDO STATIC RAM

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage. The TC518512PL operates from a single 5V power s.

TC518512TRL-10LT Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL-(LT) is guaranteed over an operating temperature range of -20 - 7LfC. The TC518512PL is available in a 32-pin

TC518512PL-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TC518512TRL-10LT, TC518512PL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC518512TRL-10LT, TC518512PL

Manufacturer:

Toshiba ↗

File Size:

296.69 KB

Description:

Silicon gate cmos pseudo static ram.

Note:

This datasheet PDF includes multiple part numbers: TC518512TRL-10LT, TC518512PL.
Please refer to the document for exact specifications by model.

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TC518512TRL-10LT TC518512PL SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

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