The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.
The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage.
The TC518512PL operates from a single 5V power
TC518512TRL-10DR Features
* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small
Datasheet Details
TC518512TRL-10DR, TC518512PL-70DR
315.88 KB
Silicon gate cmos pseudo static ram.
This datasheet PDF includes multiple part numbers: TC518512TRL-10DR, TC518512PL-70DR.
Please refer to the document for exact specifications by model.
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