TC58BVG2S0HBAI6 Datasheet - Toshiba

TC58BVG2S0HBAI6 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM

The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TC58BVG2S0HBAI6 Features

* Organization x8 Memory cell array 4224 × 128K × 8 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BVG2S0HBAI6-Toshiba.pdf