TC58BVG2S0HBAI6 - 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM

Name: TC58BVG2S0HBAI6
SKU: TC58BVG2S0HBAI6-1096659

Toshiba

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Datasheet Details

Part number	TC58BVG2S0HBAI6
Manufacturer	Toshiba
File Size	357.47 KB
Description	4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58BVG2S0HBAI6-Toshiba.pdf

TC58BVG2S0HBAI6 Product details

Description

The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Features

Organization x8 Memory cell array 4224 × 128K × 8 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 2008 blocks Max 2048 blocks.
Power supply VCC = 2.7V to 3.6V.
Access time Cell arr.

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Published: Feb 16, 2017 |