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TC58BVG2S0HBAI6

4G-BIT (512M x 8 BIT) CMOS NAND E2PROM

TC58BVG2S0HBAI6 Features

* Organization x8 Memory cell array 4224 × 128K × 8 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BVG2S0HBAI6 General Description

The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allows program and read data to be transferred between.

TC58BVG2S0HBAI6 Datasheet (357.47 KB)

Preview of TC58BVG2S0HBAI6 PDF

Datasheet Details

Part number:

TC58BVG2S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

357.47 KB

Description:

4g-bit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58BVG2S0HBAI6 4G-BIT 512M BIT CMOS NAND E2PROM Toshiba

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