Datasheet Specifications
- Part number
- TC59SM816CFTI
- Manufacturer
- Toshiba ↗
- File Size
- 2.76 MB
- Datasheet
- TC59SM816CFTI_Toshiba.pdf
- Description
- SDRAM
Description
www.DataSheet4U.com TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYN.
Features
* PARAMETER -75 tCK Clock Cycle Time (min) 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) ICC1 Operation Current (max) (SingTC59SM816CFTI Distributors
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