TC59SM816CFTI Datasheet, Sdram, Toshiba

TC59SM816CFTI Features

  • Sdram PARAMETER -75 tCK Clock Cycle Time (min) 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge Command Period (min) t

PDF File Details

Part number:

TC59SM816CFTI

Manufacturer:

Toshiba ↗

File Size:

2.76MB

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📄 Datasheet

Description:

Sdram. TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits. Fully synchronous

Datasheet Preview: TC59SM816CFTI 📥 Download PDF (2.76MB)
Page 2 of TC59SM816CFTI Page 3 of TC59SM816CFTI

TC59SM816CFTI Application

  • Applications such as work-stations. FEATURES PARAMETER -75 tCK Clock Cycle Time (min) 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns

TAGS

TC59SM816CFTI
SDRAM
Toshiba

📁 Related Datasheet

TC59SM816CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816CMB - (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
.. TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816CMBL - (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
.. TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804CFTL - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

Stock and price

part
Toshiba America Electronic Components
Bristol Electronics
TC59SM816CFTI-75
2 In Stock
0
Unit Price : $0
No Longer Stocked
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