* PARAMETER -75 tCK Clock Cycle Time (min) 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA TC59SM816 -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) ICC1 Operation Current (max) (Sing
TC59SM816CFTI Datasheet (2.76 MB)
TC59SM816CFTI
2.76 MB
Sdram.
www.DataSheet4U.com
TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYN.
📁 Related Datasheet
TC59SM816CFT (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
TC59SM816CFTL (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
TC59SM816CMB (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
TC59SM816CMBL (TC59SM804CMB - TC59SM816CMB) SDRAM (Toshiba)
TC59SM816BFT (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
TC59SM816BFTL (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
TC59SM804BFT (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
TC59SM804BFTL (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
TC59SM804CFT (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
TC59SM804CFTL (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
