TC59SM816CFTL Datasheet, Sdram, Toshiba

TC59SM816CFTL Features

• Sdram PARAMETER -70 tCK Clock Cycle Time (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90

PDF File Details

Part number:

TC59SM816CFTL

Manufacturer:

Toshiba ↗

File Size:

2.78MB

Download:

📄 Datasheet

Description:

(tc59sm804cft - tc59sm816cft) sdram. TC59SM816CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CF

TC59SM816CFTL Application

• Applications such as work-stations. FEATURES PARAMETER -70 tCK Clock Cycle Time (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804

TAGS

TC59SM816CFTL

Toshiba

📁 Related Datasheet

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.. TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM816BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM (Toshiba)
.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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.. TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

TC59SM804CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM (Toshiba)
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