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TC59SM816CMBL

(TC59SM804CMB - TC59SM816CMB) SDRAM

TC59SM816CMBL Features

* PARAMETER -70 tCK Clock Cycle Time (min) 7 ns 40 ns 5.4 ns 56 ns 80 mA 100 mA 3 mA TC59SM816/M808/M804 -75 7.5 ns 45 ns 5.4 ns 65 ns 75 mA 95 mA 3 mA -80 8 ns 48 ns 6 ns 68 ns 70 mA 90 mA 3 mA tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active

TC59SM816CMBL General Description

TC59SM816CMB/CMBL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CMB/CMBL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CMB/CMBL is organized as 16,777,216 words × 4 banks × 4 bits. Fully synchronous operations a.

TC59SM816CMBL Datasheet (2.79 MB)

Preview of TC59SM816CMBL PDF

Datasheet Details

Part number:

TC59SM816CMBL

Manufacturer:

Toshiba ↗

File Size:

2.79 MB

Description:

(tc59sm804cmb - tc59sm816cmb) sdram.
www.DataSheet4U.com TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS.

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TAGS

TC59SM816CMBL TC59SM804CMB TC59SM816CMB SDRAM Toshiba

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