TC59SM816CMBL
2.79MB
(tc59sm804cmb - tc59sm816cmb) sdram. TC59SM816CMB/CMBL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CM
TAGS
📁 Related Datasheet
TC59SM816CMB - (TC59SM804CMB - TC59SM816CMB) SDRAM
(Toshiba)
..
TC59SM816/08/04CMB/CMBL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM816CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM
(Toshiba)
..
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM816CFTI - SDRAM
(Toshiba)
..
TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYN.
TC59SM816CFTL - (TC59SM804CFT - TC59SM816CFT) SDRAM
(Toshiba)
..
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM816BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM
(Toshiba)
..
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM816BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM
(Toshiba)
..
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM804BFT - (TC59SM804BFT - TC59SM816BFT) SDRAM
(Toshiba)
..
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM804BFTL - (TC59SM804BFT - TC59SM816BFT) SDRAM
(Toshiba)
..
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM804CFT - (TC59SM804CFT - TC59SM816CFT) SDRAM
(Toshiba)
..
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.
TC59SM804CFTL - (TC59SM804CFT - TC59SM816CFT) SDRAM
(Toshiba)
..
TC59SM816/08/04CFT/CFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS.