TC74VHC10F Datasheet - Toshiba

TC74VHC10F Triple 3-Input NAND Gate

TC74VHC10F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC10F, TC74VHC10FT Triple 3-Input NAND Gate The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input prote.

TC74VHC10F Features

* High speed: tpd = 3.9 ns (typ.) at VCC = 5 V

* Low power dissipation: ICC = 2 μA (max) at Ta = 25°C

* High noise immunity: VNIH = VNIL = 28% VCC (min)

* Power down protection is provided on all inputs.

* Balanced propagation delays: tpLH ∼

* tpHL

TC74VHC10F_ToshibaSemiconductor.pdf