Datasheet Details
Part number:
TC74VHC10FT
Manufacturer:
File Size:
209.61 KB
Description:
Triple 3-Input NAND Gate
Features
* High speed: tpd = 3.9 ns (typ.) at VCC = 5 V
* Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
* High noise immunity: VNIH = VNIL = 28% VCC (min)
* Power down protection is provided on all inputs.
* Balanced propagation delays: tpLH ∼
* tpHL
TC74VHC10FT_ToshibaSemiconductor.pdf
TC74VHC10FT, Triple 3-Input NAND Gate
TC74VHC10F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC10F, TC74VHC10FT Triple 3-Input NAND Gate The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
An input prote
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