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TK110Z65Z - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK110Z65Z
Manufacturer	Toshiba ↗
File Size	483.17 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK110Z65Z-Toshiba.pdf

TK110Z65Z Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110Z65Z TO-247-4L(T) 1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specifi.

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Published: Dec 30, 2023 |