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TK110E65Z Datasheet - Toshiba

TK110E65Z Silicon N-Channel MOSFET

TK110E65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110E65Z 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ra

TK110E65Z Datasheet (481.98 KB)

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Datasheet Details

Part number:

TK110E65Z

Manufacturer:

Toshiba ↗

File Size:

481.98 KB

Description:

Silicon n-channel mosfet.

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TK110E65Z Silicon N-Channel MOSFET Toshiba

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