* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink
TK11S10N1L Datasheet (431.99 KB)
TK11S10N1L
431.99 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK11S10N1L
1. Applications
* Automotive
* Motor Drivers
* Switching Voltage Regulator.
📁 Related Datasheet
TK11031 TEMPERATURE SENSOR IC (TOKO)
TK11032 TEMPERATURE SENSOR IC (TOKO)
TK11033 TEMPERATURE SENSOR IC (TOKO)
TK11034 TEMPERATURE SENSOR IC (TOKO)
TK11041 TEMPERATURE SENSOR IC (TOKO)
TK11042 TEMPERATURE SENSOR IC (TOKO)
TK11043 TEMPERATURE SENSOR IC (TOKO)
TK11050 TEMPERATURE CONTROLLER IC (TOKO)
TK11051 TEMPERATURE CONTROLLER IC (TOKO)
TK11052 THERMOSTAT IC (TOKO)
