TK11S10N1L Datasheet - Toshiba

TK11S10N1L, Silicon N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1.

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink

Applications

* Automotive
* Motor Drivers

TK11S10N1L-Toshiba.pdf