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TK125V65Z Datasheet - Toshiba

TK125V65Z Silicon N-Channel MOSFET

TK125V65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK125V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) No

TK125V65Z Datasheet (465.45 KB)

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Datasheet Details

Part number:

TK125V65Z

Manufacturer:

Toshiba ↗

File Size:

465.45 KB

Description:

Silicon n-channel mosfet.

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TK125V65Z Silicon N-Channel MOSFET Toshiba

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