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TK12P50W Datasheet - Toshiba

TK12P50W N-Channel MOSFET

TK12P50W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4.

TK12P50W-Toshiba.pdf

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Datasheet Details

Part number:

TK12P50W

Manufacturer:

Toshiba ↗

File Size:

273.83 KB

Description:

N-channel mosfet.

TK12P50W Distributor

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TK12P50W TK12P50W N-Channel MOSFET Toshiba