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TK12E80W Datasheet - Toshiba

TK12E80W Silicon N-Channel MOSFET

TK12E80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. A

TK12E80W-Toshiba.pdf

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Datasheet Details

Part number:

TK12E80W

Manufacturer:

Toshiba ↗

File Size:

414.87 KB

Description:

Silicon n-channel mosfet.

TK12E80W Distributor

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TK12E80W TK12E80W Silicon N-Channel MOSFET Toshiba