Datasheet4U.com

TK12E80W - Silicon N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK12E80W Datasheet Preview — Preview of TK12E80W PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK12E80W
Manufacturer	Toshiba ↗
File Size	414.87 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK12E80W-Toshiba.pdf

TK12E80W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power d.

📁 TK12E80W Similar Datasheet

TK12E60U - MOSFETs (Toshiba Semiconductor)
TK12E60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK12 - Phase Control Thyristor (Dynex Semiconductor)
TK12.5A - Current Transducer (Topstek)
TK120 - Temperature Sensor (PRO)
TK120-1A - Temperature Sensor (PRO)
TK1214K - Phase Control Thyristor (Dynex Semiconductor)
TK1214M - Phase Control Thyristor (Dynex Semiconductor)

Other Datasheets by Toshiba

TK125V65Z - Silicon N-Channel MOSFET
TK12A50D5 - Silicon N-Channel MOSFET
TK12A50W - N-Channel MOSFET
TK12A80W - Silicon N-Channel MOSFET
TK12P50W - N-Channel MOSFET
TK100A10N1 - Silicon N-Channel MOSFET

Published: Jul 30, 2019 |