TK12E80W Datasheet, Mosfet, Toshiba

TK12E80W Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 1

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Part number:

TK12E80W

Manufacturer:

Toshiba ↗

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414.87kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK12E80W Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction

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TK12E80W

Toshiba

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