Part number:
TK12E60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
251.39 KB
Description:
Silicon n-channel mosfet.
TK12E60W Datasheet (251.39 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolut
TK12E60W Datasheet (251.39 KB)
TK12E60W
Toshiba ↗ Semiconductor
251.39 KB
Silicon n-channel mosfet.
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