Part number:
TK12E60U
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
240.35 KB
Description:
Mosfets.
TK12E60U Datasheet (240.35 KB)
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain
TK12E60U Datasheet (240.35 KB)
TK12E60U
Toshiba ↗ Semiconductor
240.35 KB
Mosfets.
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