TK12E60U - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TK12E60U
Manufacturer	Toshiba ↗ Semiconductor
File Size	240.35 KB
Description	MOSFETs
Datasheet	TK12E60U-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

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Published: Sep 11, 2014 |