TK12E60U MOSFETs

Toshiba Semiconductor

Description

TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK12E60U
Manufacturer: Toshiba ↗ Semiconductor
File Size: 240.35 KB
Datasheet: TK12E60U-ToshibaSemiconductor.pdf
Description: MOSFETs

Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain

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TK12E60U MOSFETs Toshiba Semiconductor

Toshiba Semiconductor TK12E60U-like datasheet