TK31Z60X - Silicon N-Channel MOSFET

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Toshiba

Part number	TK31Z60X
Manufacturer	Toshiba
File Size	281.16 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK31Z60X Datasheet
Additional preview pages of the TK31Z60X datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31Z60X TO-247-4L(T) 1. Drain (Heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. ©2016-2017 Toshiba Electroni.

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Published: Jan 2, 2024 |