TPC8407
Features
(1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance
P-channel RDS(ON) = 18 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (4) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (5) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 m A), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 m A)
3. Packaging and Internal Circuit
SOP-8
1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1
Start of mercial production
2011-03
2014-01-07
Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Drain-source voltage
Characteristics
Gate-source voltage
P/N
Symbol
Rating
Unit
P-ch
VDSS
-30
N-ch
P-ch
VGSS
±20
N-ch
±20
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual operation) Power...
