TPH2900ENH - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2900ENH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source volta.

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Published: Mar 7, 2015 |