TPH2R104PL - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ. ) (3) Small output charge : Qoss = 46 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =1.6 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 40 V ) (6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH2R104PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-06 2016-06-17 Rev.

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Published: Feb 26, 2025 |