* (1) High-speed switching (2) Small gate charge : QSW = 22 nC (typ.) (3) Small output charge : Qoss = 55 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =2.1 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 45 V ) (6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V,
TPH2R805PL Datasheet (537.87 KB)
TPH2R805PL
537.87 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH2R805PL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators .
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