TPH2R608NH Datasheet - Toshiba

TPH2R608NH - N-Channel MOSFET

TPH2R608NH Features

* (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit T

TPH2R608NH-Toshiba.pdf

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Datasheet Details

Part number:

TPH2R608NH

Manufacturer:

Toshiba ↗

File Size:

264.26 KB

Description:

N-channel mosfet.

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TPH2R608NH N-Channel MOSFET Toshiba