Datasheet4U.com

TPH3R203NL - Silicon N-channel MOSFET

Toshiba

📥 Download Datasheet

TPH3R203NL Datasheet Preview — Preview of TPH3R203NL PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TPH3R203NL
Manufacturer	Toshiba ↗
File Size	237.32 KB
Description	Silicon N-channel MOSFET
Datasheet	TPH3R203NL-Toshiba.pdf

TPH3R203NL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 5.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPH3R203NL 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source volt.

📁 TPH3R203NL Similar Datasheet

TPH3006PD - GaN Power Low-loss Switch (Transphorm)
TPH3006PS - GaN Power Low-loss Switch (Transphorm)
TPH3202L - 600V GaN FET (Transphorm)
TPH3202P - 600V GaN FET (Transphorm)
TPH3205ESBET - 650V GaN FET (Transphorm)
TPH3205WS - 600V Cascode GaN FET (Transphorm)
TPH3205WSB - 650V GaN FET (Transphorm)
TPH3206L - 650V GaN FET (Transphorm)

Other Datasheets by Toshiba

TPH3R003PL - Silicon N-channel MOSFET
TPH3R506PL - Silicon N-channel MOSFET
TPH3R704PL - Silicon N-channel MOSFET
TPH3R70APL - Silicon N-channel MOSFET
TPH3300CNH - Silicon N-channel MOSFET
TPH11003NL - MOSFETs

Published: Mar 7, 2015 |