TPH3202P Datasheet - Transphorm

TPH3202P 600V GaN FET

The TPH3202P Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through .

TPH3202P Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety

TPH3202P-Transphorm.pdf