TPH3202P - 600V GaN FET
The TPH3202P Series 600V, 290mΩ Gallium Nitride (GaN) FETs are normally-off devices.
They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through
TPH3202P Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety
