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TPH3205ESBET 650V GaN FET

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Description

PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) .
The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number
TPH3205ESBET
Manufacturer
Transphorm
File Size
1.31 MB
Datasheet
TPH3205ESBET-Transphorm.pdf
Description
650V GaN FET

Features

* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoH

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