TPH8R008NH - MOSFETs

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Toshiba

Part number	TPH8R008NH
Manufacturer	Toshiba
File Size	234.68 KB
Description	MOSFETs
Datasheet	TPH8R008NH Datasheet
Additional preview pages of the TPH8R008NH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-sourc.

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Published: Sep 4, 2014 |

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