TPH8R80ANH Datasheet - Toshiba

TPH8R80ANH, Field Effect Transistor

TPH8R80ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH8R80ANH 1.Applications * * * DC-DC Converters Switching Voltage Regul.

Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packagi

TPH8R80ANH_Toshiba.pdf