* (1) High-speed switching (2) Small gate charge: QSW = 11.7 nC (typ.) (3) Small output charge: Qoss = 87 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.3 to 4.3 V (VDS = 10 V, I
TPH9R00CQH Datasheet (649.65 KB)
TPH9R00CQH
649.65 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*-H)
TPH9R00CQH
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulat.
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