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TPH12008NH Datasheet - Toshiba

TPH12008NH Silicon N-Channel MOSFET

TPH12008NH Features

* (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packagi

TPH12008NH-Toshiba.pdf

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Datasheet Details

Part number:

TPH12008NH

Manufacturer:

Toshiba ↗

File Size:

294.91 KB

Description:

Silicon n-channel mosfet.

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