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TPH1400ANH Datasheet - Toshiba

TPH1400ANH Field Effect Transistor

TPH1400ANH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packa

TPH1400ANH_Toshiba.pdf

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Datasheet Details

Part number:

TPH1400ANH

Manufacturer:

Toshiba ↗

File Size:

263.30 KB

Description:

Field effect transistor.

TPH1400ANH Distributor

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TPH1400ANH TPH1400ANH Field Effect Transistor Toshiba