* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10
TPH14006NH Datasheet (233.84 KB)
TPH14006NH
233.84 KB
Mosfets.
TPH14006NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH14006NH
1. Applications
*
*
* Switching Voltage Regulators Motor Drive.
📁 Related Datasheet
TPH1400ANH Field Effect Transistor (Toshiba)
TPH100A Current Transducers (Topstek)
TPH10A-LTC Current Transducers (Topstek)
TPH11003NL MOSFETs (Toshiba)
TPH11006NL Silicon N-channel MOSFET (Toshiba)
TPH1110ENH Silicon N-channel MOSFET (Toshiba)
TPH1110FNH Silicon N-channel MOSFET (Toshiba)
TPH12.5A-LTC Current Transducers (Topstek)
TPH12008NH Silicon N-Channel MOSFET (Toshiba)
TPH1205D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
