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TV00570003CDGB

MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

TV00570003CDGB Features

* Power supply voltage of 2.7 to 3.3 V Operating temperature of

* 30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features

* Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increment

TV00570003CDGB Datasheet (598.13 KB)

Preview of TV00570003CDGB PDF

Datasheet Details

Part number:

TV00570003CDGB

Manufacturer:

Toshiba ↗

File Size:

598.13 KB

Description:

Multi-chip integrated circuit silicon gate cmos.
TV00570002/003CDGB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package DESCR.

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TV00570003CDGB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba

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