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TV00570003CDGB - MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

This page provides the datasheet information for the TV00570003CDGB, a member of the TV00570002CDGB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS family.

Datasheet Summary

Description

The TV00570002/003CDGB is a mixed multi-chip package containing a 33,554,432-bit pseudo static RAM and a 134,217,728-bit Nor Flash Memory.

The TV00570002/003CDGB is available in a 81-pin BGA package making it suitable for a variety of applications.

Features

  • Power supply voltage of 2.7 to 3.3 V Operating temperature of.
  • 30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features.
  • Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increment Read operation: 24mA maximum Page Read operating : 5 mA maximum Program / Erase operating: 15 mA maximum Standby : 10 μA maximum Access time : Random : 70 ns @CL=30pF Page : 25 ns @CL=30pF Functions.

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Datasheet preview – TV00570003CDGB

Datasheet Details

Part number TV00570003CDGB
Manufacturer Toshiba
File Size 598.13 KB
Description MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet download datasheet TV00570003CDGB Datasheet
Additional preview pages of the TV00570003CDGB datasheet.

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Full PDF Text Transcription

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TV00570002/003CDGB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package DESCRIPTION The TV00570002/003CDGB is a mixed multi-chip package containing a 33,554,432-bit pseudo static RAM and a 134,217,728-bit Nor Flash Memory. The TV00570002/003CDGB is available in a 81-pin BGA package making it suitable for a variety of applications. MCP Features • • • Power supply voltage of 2.7 to 3.3 V Operating temperature of −30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.
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