Datasheet Details
- Part number
- 2SD1223
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 170.61 KB
- Datasheet
- 2SD1223_ToshibaSemiconductor.pdf
- Description
- NPN TRANSISTOR
2SD1223 Description
2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Appli.
2SD1223 Features
* TOSHIBA sales representative for details as to environmental matters such
2SD1223 Applications
* Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
* High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Char
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