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2SK3079 N-Channel MOSFET

2SK3079 Description

2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain :.

2SK3079 Applications

* (GSM) Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC S Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range YMBOL VDSS 10 VGSS 5

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N-Channel MOSFET Toshiba Semiconductor
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